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2SB669 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB669
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB669 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
2SB669
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -70V(Min)
·
High DC Current Gain
: hFE= 2000(Min) @IC= -1A
·
Low Saturation Voltage
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in power amplifier and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-70
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-4
A
ICP
Collector Current-Peak
-6
A
IB
Base Current-Continuous
-0.3
A
PC
Collector Power Dissipation
@ Ta=25℃
2
W
Collector Power Dissipation
@ TC=25℃
40
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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