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F15F10FP Datasheet(PDF) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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F15F10FP Datasheet(HTML) 2 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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2 / 4 page ![]() Technical Data Green Poducts Data Sheet N1814, Rev. - China - Germany - Korea - Singapore - United States http://www.smc-diodes.com - sales@ smc-diodes.com FTB6F-15FP THRU FTB10F-15FP Marking Diagram: Type number Marking code FTB6F-15FP F15F6FP FTB8F-15FP F15F8FP FTB10F-15FP F15F10FP Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol FTB6F -15FP FTB8F -15FP FTB10F -15FP Units Maximum repetitive peak reverse voltage VRRM 600 800 1000 V Maximum RMS voltage VRMS 420 560 700 V Maximum DC blocking voltage VDC 600 800 1000 V Maximum Average Forward Rectified Current at TA=75℃ IF(AV) 1.5 A Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) IFSM 50 A Maximum Instantaneous Forward Voltage at 1.5A VF 1.3 V Maximum DC reverse current TA=25 ℃ at rated DC blocking voltage TA=125 ℃ IR 5.0 50 µA Maximum Reverse Recovery Time (Note 3) Trr 160 ns Typical Junction Capacitance (Note 1) CJ 35 Pf Typical Thermal Resistance (Note 2) RθJA 75 °C/W Junction Temperature TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Mounted on glass epoxy PC board with 4×(5×5mm 2) copper pad. 3. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A |
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