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BD369 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # BD369
Description  isc Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD369 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BD369 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD369 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistors
BD369
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
(1)
Collector-Emitter Sustaining Voltage
IC= -50mA ;IB= 0
-80
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -10A; IB= -1 A
-1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= -25A; IB= -6.25A
-4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=-25A; IB=-6.25A
-2.5
V
VBE(on)
Base-Emitter On Voltage
IC= -10A ; VCE= -4V
-1.5
V
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
-2.0
mA
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-1.0
mA
hFE-1
DC Current Gain
IC=-5A ; VCE=-4V
25
hFE-2
DC Current Gain
IC=-10A ; VCE=-4V
20
100
hFE-3
DC Current Gain
IC=-25A ; VCE=-4V
4
COB
Output Capacitance
IE= 0;VCB=-10V;ftest= 1MHz
1000
pF
fT
Current-Gain—Bandwidth Product
IC=-1A ; VCE=-10V ;ftest= 1MHz
4
MHz



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