2SA1069-Z datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

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isc Silicon PNP Power Transistor

2SA1069-Z

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -3.0A ; IB= -0.3A, L=1mH

-60

VCEX(SUS)-1

Collector-Emitter Sustaining Voltage

IC= -3.0A ; IB1=-IB2= -0.3A,

VBE(OFF)=5.0V, L=180μH,clamped

-60

VCEX(SUS)-2

Collector-Emitter Sustaining Voltage

IC= -6.0A ; IB1= -0.6A; IB2= -0.3A,

VBE(OFF)= 5.0V, L= 180μH,clamped

-60

VCE(sat)NOTE Collector-Emitter Saturation Voltage

IC= -3.0A; IB= -0.3A

-0.6

VBE(sat)NOTE Base-Emitter Saturation Voltage

IC= -3.0A; IB= -0.3A

-1.5

ICBO

Collector Cutoff Current

VCB= -60V; IE= 0

-10

ICER

Collector Cutoff Current

VCE= -60V; RBE= 51Ω, Ta=125℃

-1.0

ICEX

Collector Cutoff Current

VCE= -60V; VBE(off)= -1.5V

VCE= -60V; VBE(off)= -1.5V, Ta=125℃

-10

-1.0

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-10

hFE-1NOTE

DC Current Gain

IC= -0.3A; VCE= -5V

hFE-2NOTE

DC Current Gain

IC= -3.0A; VCE= -5V

200

Switching times

ton

Turn-on Time

IC= -3.0A ,RL= 17Ω,

IB1= -IB2= -0.3A,VCC≈-50V

0.5

tstg

Storage Time

2.5

Fall Time

0.5

NOTE:Pulse test PW≤350us,duty cycle ≤2%



hFE-2 Classifications

40-80

60-120

100-200

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