2N6530 datasheet(1/2 Pages) ISC

Part #	2N6530

Description	isc Silicon NPN Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Darlington Power Transistor

2N6530

DESCRIPTION

·

High DC Current Gain-

: hFE= 1000(Min.)@IC= 5A

·

Collector-Emitter Sustaining Voltage-

:VCEO(SUS)= 80V(Min.)

·

Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V(Max.)@ IC= 5A

APPLICATIONS

·

Power switching

·

Hammer drivers

·

Series and shunt regulators

·

Audio amplifiers

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCER

Collector-Emitter Voltage RBE= 100Ω

80

V

VCEV

Collector-Emitter Voltage VBE= -1.5V

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

8

A

ICM

Collector Current-peak

15

A

IB

Base Current

250

mA

PC

Collector Power Dissipation

@TC=25℃

65

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.92

℃

/W

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