2N3741R datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

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isc Silicon PNP Power Transistors

2N3741R

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -50mA ; IB= 0

-80

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -125mA

-0.6

VBE(on)

Base-Emitter On Voltage

IC= -250mA ; VCE= -1V

-1.0

ICEO

Collector Cutoff Current

VCE= -60V; IB= 0

-1.0

ICEX

Collector Cutoff Current

VCE= -80V; VBE(off)= -1.5V

VCE= -60V; VBE(off)= -1.5V,TC=150℃

-0.1

-1.0

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -7V; IC=0

-0.5

hFE-1

DC Current Gain

IC= -100mA ; VCE= -1V

hFE-2

DC Current Gain

IC= -250mA ; VCE= -1V

180

hFE-3

DC Current Gain

IC= -500mA ; VCE= -1V

hFE-4

DC Current Gain

IC= -1A ; VCE= -1V

COB

Output Capacitance

IE= 0 ; VCB= -10V;ftest= 0.1MHz

100

Current-Gain—Bandwidth Product

IC=-0.1A ; VCE= -10V ;ftest= 1.0MHz

MHz

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