MMBR951L datasheet(2/8 Pages) ISC

2 / 8 page

INCHANGE Semiconductor

isc RF Product Specification

isc website：www.iscsemi.cn

isc Silicon NPN RF Transistor

MMBR951L

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 0.1mA ; IB= 0

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 0.1mA ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0

0.1

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

0.1

hFE

DC Current Gain

IC= 5mA ; VCE= 6V

200

COB

Output Capacitance

IE= 0 ; VCB= 10V; f= 1MHz

0.45

1.0

Current-Gain—Bandwidth Product

IC= 30mA ; VCE= 6V; f= 1GHz

GHz

︱

S21e︱2 Insertion Power Gain

IC= 30mA ; VCE= 6V;f= 1.0GHz

12.5

︱

S21e︱2 Insertion Power Gain

IC= 30mA ; VCE= 6V;f= 2.0GHz

7.0

GU max

Maximum Unilateral Gain

IC= 30mA ; VCE= 8V;f= 1.0GHz

GU max

Maximum Unilateral Gain

IC= 30mA ; VCE= 8V;f= 2.0GHz

Noise Figure

IC= 5mA ; VCE= 6V; f= 1GHz;

RG= 50Ω

1.9

2.8

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