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CTL0502NS-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation |
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CTL0502NS-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 3 Proprietary & Confidential Page 1 Jun, 2015 CTL0502NS-R3 N-Channel Enhancement MOSFET Package Outline Schematic Features •••• Drain-Source Breakdown Voltage VDSS 20 V •••• Drain-Source On-Resistance RDS(ON) 21m Ω, at VGS= 4.5V, ID= 5.0A RDS(ON) 24m Ω, at VGS= 2.5V, ID= 3.5A RDS(ON) 31m Ω, at VGS= 1.8V, ID= 2.8A •••• Continuous Drain Current at TA=25 ℃,ID = 5.0A •••• Advanced high cell density Trench Technology •••• RoHS Compliance & Halogen Free Applications •••• Power Management •••• Lithium Ion Battery Description The CTL0502NS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications. Gate Source Drain Gate Drain Source |
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