CTL0422PS-R3 datasheet(1/11 Pages) CTMICRO

Part #	CTL0422PS-R3

Description	P-Channel Enhancement MOSFET

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	CTMICRO [CT Micro International Corporation]

Direct Link	http://www.ct-micro.com/

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1 / 11 page

CT Micro

Rev 1

Proprietary & Confidential

Page 1

Nov, 2013

CTL0422PS-R3

P-Channel Enhancement MOSFET

Package Outline

Schematic

Features



Drain-Source Breakdown Voltage VDSS -20 V



Drain-Source On-Resistance

RDS(ON) 45m

, at V

GS

= -4.5V, ID= -4.0A

RDS(ON) 52m

, at V

GS

= -2.5V, ID= -3.0A

RDS(ON) 60m

, at V

GS

= -1.8V, ID= -2.0A



Continuous Drain Current at TC=25℃ ID = -4.0A



Advanced high cell density Trench Technology



RoHS Compliance & Halogen Free

Applications



Power Management



Lithium Ion Battery

Description

The CTL0422PS-R3 is the P-Channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology. This high

density process is especially tailored to minimize on-state

resistance. These devices are particularly suited for low

voltage application such as cellular phone and notebook

computer power management and other battery powered

circuits where high-side switching and low in-line power

loss are needed in a very small outline surface mount

package.

Gate

Source

Drain

Gate

Drain

Source

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