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CTL0372PS-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation |
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CTL0372PS-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 1 Proprietary & Confidential Page 1 Jun, 2015 CTL0372PS-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 50m Ω, at VGS= - 4.5V, IDS= - 3.2A RDS(ON) 67m Ω, at VGS= - 2.5V, IDS= - 2.8A RDS(ON) 86m Ω, at VGS= - 1.8V, IDS= - 2.3A • Continuous Drain Current at TA=25℃ ID = - 3.7A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Lithium Ion Battery • Load Switch Description The CTL0372PS-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Gate Source Drain Gate Drain Source |
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