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BD951F Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD951F
Description  Complement to Type BD950F/952F/954F/956F
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD951F Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BD951F Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD951F Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
1
isc Silicon NPN Power Transistor
BD949F/951F/953F/955F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA
·Complement to Type BD950F/952F/954F/956F
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
BD949F
60
V
BD951F
80
BD953F
100
BD955F
120
VCEO
Collector-Emitter Voltage
BD949F
60
V
BD951F
80
BD953F
100
BD955F
120
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
8
A
PC
Collector Power Dissipation
@ TC=25℃
22
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
8.12
℃/W


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