R

SEMICONDUCT OR

LL103A THUR LL103C

SMALL SIGNAL SCHOTTKY DIODES

FEATURES

MECHANICAL DATA

ABSOLUTE RATINGS(LIMITING VALUES)

ELECTRICAL CHARACTERISTICS

For general purpose applications

The LL103 series is a Metal-on-silicon junction Schottky barrier device which

is protected by a PN junction guard ring. The low forward voltage drop and fast

switching make it ideal for protection of MOS devices, steering, biasing, and coupling

diodes for fast switching and low logic level applications. Other applications are click

suppressions, efficient full wave bridges in telephone subsets, and blocking diodes in

rechargeable low voltage battery systems.

These diodes are also available in the DO-35 case with the type designation

SD103A to SD103C.

Leakage current at V =30V

R

V =20V

V =10V

R

R

Forward voltage drop at I =20mA

I =200mA

F

F

0.37

0.6

5

5

5

50

10

Reverse Recovery time at I =I =50mA,recover to 200mA

recover to 0.1 R

FR

I

Junction Capacitance at V =0V ,f=1MHz

R

mW

A

V

V

V

Power Dissipation (infinite Heat Sink)

Peak Reverse Voltage

Storage Temperature Range

Junction temperature

Maximum Single cycle surge 60Hz sine wave

LL103A

LL103A

LL103B

LL103B

LL103C

LL103C

-55 to+150

V

V

mA

mA

mA

pF

ns

125

15

400

1)

40

30

20

1) Valid provided that electrodes are kept at ambient temperature

Case: MiniMELF glass case(SOD-80 )

Polarity: Color band denotes cathode end

Weight: Approx. 0.05 gram

Symbols

Units

Value

Min.

Typ.

Max.

Unis

Symbols

MiniMELF

Dimensions in inches and (millimeters)

0.142(3.6)

0.126(3.2)

0.019(0.48)

0.011(0.28)

0.063(1.6)

0.055(1.4)

JINAN JINGHENG ELECTRONICS CO., LTD.

HTTP

WWW.JINGHENGGROUP.COM

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31

-

High temperature soldering guaranteed 260°C 10 seconds at terminals

:/

Component in accordance to RoHS 2011 65 EU

//

°

C

°

C

(Ratings at 25°C ambient temperature unless otherwise specified)