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2SC5227 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5227 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 5 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN RF Transistor 2SC5227 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1 μ A IEBO Emitter Cutoff Current VEB= 1V; IC= 0 10 μ A hFE DC Current Gain IC= 20mA ; VCE= 5V 60 270 ︱ S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 5V; f= 1GHz 9 12 dB ︱ S21e︱2 Insertion Power Gain IC= 3mA ; VCE= 2V; f= 1GHz 8 dB fT Current-Gain—Bandwidth Product IC= 20mA ; VCE= 5V 5 7 GHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.75 1.2 pF Cre Feedback Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.5 pF NF Noise Figure IC= 7mA ; VCE= 5V;f= 1GHz 1.0 1.8 dB hFE Classification 3 4 5 60-120 90-180 135-270 |
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