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P4KE47 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # P4KE47
Description  Unidirectional and bidirectional Transient Voltage Suppressor Diodes
PDF  4 Pages
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

P4KE47 Datasheet(HTML) 1 Page - Diotec Semiconductor

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1) Non-repetitive current pulse see curve I
PPM = f (tr)
Höchstzulässiger Spitzenwert eines einmaligen Strom-Impulses, siehe Kurve I
PPM = f (tr)
2) Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlußdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
3) Unidirectional diodes only – Nur für unidirektionale Dioden
1
07.01.2003
P4 KE 6.8 ... P4 KE 440CA
Unidirectional and bidirectional
Unidirektionale und bidirektionale
Transient Voltage Suppressor Diodes
Spannungs-Begrenzer-Dioden
Peak pulse power dissipation
400 W
Impuls-Verlustleistung
Nominal breakdown voltage
6.8...440 V
Nominale Abbruch-Spannung
Plastic case – Kunststoffgehäuse
DO-15 (DO-204AC)
Weight approx. – Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
Standard packaging taped in ammo pack
see page 16
Standard Lieferform gegurtet in Ammo-Pack
siehe Seite 16
For bidirectional types (suffix “C” or “CA”), electrical characteristics apply in both directions.
Für bidirektionale Dioden (Suffix “C” oder “CA”) gelten die el. Werte in beiden Richtungen.
Maximum ratings and Characteristics
Kenn- und Grenzwerte
Peak pulse power dissipation (10/1000
:s waveform)
T
A = 25
/CP
PPM
400 W 1)
Impuls-Verlustleistung (Strom-Impuls 10/1000
:s)
Steady state power dissipation
T
A = 25
/CP
M(AV)
1 W 2)
Verlustleistung im Dauerbetrieb
Peak forward surge current, 60 Hz half sine-wave
T
A = 25
/CI
FSM
40 A 3)
Stoßstrom für eine 60 Hz Sinus-Halbwelle
Max. instantaneous forward voltage
I
F = 25 A
V
BR
# 200 V
V
F
< 3.0 V 3)
Augenblickswert der Durchlaßspannung
V
BR > 200 V
V
F
< 6.5 V 3)
Operating junction temperature – Sperrschichttemperatur
T
j
– 50…+175
/C
Storage temperature – Lagerungstemperatur
T
S
– 50…+175
/C
Thermal resistance junction to ambient air
R
thA
< 45 K/W 2)
Wärmewiderstand Sperrschicht – umgebende Luft
Thermal resistance junction to lead
R
thL
< 15 K/W
Wärmewiderstand Sperrschicht – Anschlußdraht


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