STTH30AC06CP datasheet(3/13 Pages) STMICROELECTRONICS

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STTH30AC06C

Characteristics

Table 5. Dynamic characteristics (per diode)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A, IR= 1 A

IF = 1 A, VR = 30 V, dIF/dt = 50 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 15 A, VR = 400 V,

dIF/dt = 100 A/µs

-4

5.5

tfr

Forward recovery time

Tj = 25 °C

IF = 15 A, VFR = 1.9 V,

dIF/dt = +100 A/µs

100

VFP

Forward recovery voltage

2.5

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, per diode)

14161820

PF(AV)(W)

d = 0.05

d = 0.2

d = 0.1

d =1

d = 0.5

d=tp/T

IF(AV)(A)

I F (A )

0.1

1.0

10.0

100.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

VF(V)

T = 25 °C

T = 150°C

Figure 3. Forward voltage drop versus forward

current (maximum values, per diode)

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse

duration (TO3P-3L, TO247 LL)

0.1

1.0

10.0

100.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

VF(V)

T = 25 °C

I F (A )

T = 150°C

Z th( j-c) /R th( j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

TO3P-3L / TO-247 LL

Single pulse

t (s)

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