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EM3581-RTR Datasheet(PDF) 15 Page - Silicon Laboratories |
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EM3581-RTR Datasheet(HTML) 15 Page - Silicon Laboratories |
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15 / 59 page ![]() EM358x Rev 1.0 15 Reset Current Quiescent current, nRESET asserted Typ at 25 °C/3.0 V Max at 85 °C/3.6 V — 2 3 mA Processor and Peripheral Currents ARM® CortexTM-M3, RAM, and flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 running at 12 MHz from crystal oscillator Radio and all peripherals off — 7.5 — mA ARM® CortexTM-M3, RAM, and flash memory 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 running at 24 MHz from crystal oscillator Radio and all peripherals off — 8.5 — mA ARM® CortexTM-M3, RAM, and flash memory sleep current 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 sleeping, CPU clock set to 12 MHz from the crystal oscillator Radio and all peripherals off — 4.0 — mA ARM® CortexTM-M3, RAM, and flash memory sleep current 25 °C, 1.8 V memory and 1.25 V core ARM® CortexTM-M3 sleeping, CPU clock set to 6 MHz from the high fre- quency RC oscillator Radio and all peripherals off — 2.5 — mA Serial controller current For each controller at maximum data rate — 0.2 — mA General purpose timer current For each timer at maximum clock rate — 0.25 — mA General purpose ADC current At maximum sample rate, DMA enabled — 1.1 — mA USB active current 1 mA USB suspended mode current 1.8 V memory and 1.25 V core ARM® CortexTM-M3 sleeping, CPU clock set to 3 MHz from the high fre- quency RC oscillator. Radio and all peripherals off 2.5 mA RX Current Radio receiver, MAC, and base- band ARM® CortexTM-M3 sleeping, CPU clock set to 12 MHz — 23.5 — mA Total RX current ( = IRadio receiver, MAC and baseband, CPU + IRAM, and Flash memory ) 25 °C, VDD_PADS=3.0 V ARM® CortexTM-M3 running at 12 MHz — 27.0 — mA 25 °C, VDD_PADS=3.0 V ARM® CortexTM-M3 running at 24 MHz — 28.0 — mA Table 3.4. DC Characteristics (Continued) Parameter Test Condition Min Typ Max Unit |
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