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Rev.2.0

SSF4953

30V Dual P-Channel MOSFET

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

-1

-3

V

46

53

Drain-Source On-State Resistance

70

85

mΩ

Forward Transconductance

8

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

525

PF

Output Capacitance

135

PF

Reverse Transfer Capacitance

F=1.0MHz

70

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

7

14

nS

Turn-on Rise Time

13

24

nS

Turn-Off Delay Time

14

25

nS

Turn-Off Fall Time

9

17

nS

Total Gate Charge

6

9

nC

Gate-Source Charge

2.2

nC

Gate-Drain Charge

2

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

-0.8

-1.2

V

Diode Forward Current (Note 2)

-2.1

A

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.