6N70G-TQ2-R datasheet(2/6 Pages) UTC

2 / 6 page

6N70

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

W-R502-710.H



ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

700

Gate-Source Voltage (Note 2)

VGSS

±30

Drain Current

Continuous

TC=25°C

TC=100°C

3.8

Pulsed

IDM

Avalanche Current (Note 2)

IAR

Avalanche Energy

Single Pulsed (Note 3)

EAS

582

Repetitive (Note 2)

EAR

Peak Diode Recovery dv/dt (Note 4)

dv/dt

2.5

V/ns

Power Dissipation

TO-220F1

TO-220F2

TO-220F

TO-262/ TO-263

125

Linear Derarting Factor

TO-220F1

TO-220F2

0.33

W/°C

TO-220F

0.32

TO-262/TO-263

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 30mH, IAS = 6A, VDD = 50V, RG = 27Ω, Starting TJ = 25°C

4. ISD ≤ 6A, di/dt ≤140A/µs, VDD ≤ BVDSS, Starting TJ = 25°C



THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

62.5

°С/W

Junction to Case

TO-220F1

TO-220F2

θJC

2.9

°С/W

TO-220F

3.1

°С/W

TO-262/TO-263

1.0

°С/W

TO-263

1.0

°С/W

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