Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

Preview PDF HTML

UT7401G-AE2-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UT7401G-AE2-R
Description  P-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT7401G-AE2-R Datasheet(HTML) 2 Page - Unisonic Technologies

  UT7401G-AE2-R Datasheet HTML 1Page - Unisonic Technologies UT7401G-AE2-R Datasheet HTML 2Page - Unisonic Technologies UT7401G-AE2-R Datasheet HTML 3Page - Unisonic Technologies UT7401G-AE2-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
UT7401
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R502-122.F
ABSOLUTE MAXIMUM RATINGS (Ta = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±12
V
TA=25°C
-1.2
A
Continuous Drain Current (Note 2)
TA=70°C
ID
-1.0
A
Pulsed Drain Current (Note 3)
IDM
-10
A
TA=25°C
350
mW
Power Dissipation (Note 2)
TA=70°C
PD
220
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes:1.
2.
3.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Pulse width limited by TJ(MAX)
Pulse width ≤300us, duty cycle ≤2%.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 2)
θJA
425
°С/W
ELECTRICAL CHARACTERISTICS (TJ=25°С, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250uA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-24V, VGS=0V
-1
uA
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±12V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250uA
-0.6
-1
-1.4
V
VGS=-10V, ID=-1.2A
122
150
mΩ
VGS=-4.5V, ID=-1.2A
147
200
mΩ
Drain-Source On-State Resistance (Note 1)
RDS(ON)
VGS=-2.5V, ID=-1.0A
207
280
mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
409
pF
Output Capacitance
COSS
55
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=-15V,
f=1MHz
42
pF
SWITCHING CHARACTERISTICS
Turn-ON Delay Time (Note 1)
tD(ON)
6.2
ns
Turn-ON Rise Time
tR
3.2
ns
Turn-OFF Delay Time
tD(OFF)
41.2
ns
Turn-OFF Fall Time
tF
VDS=-15V, VGS=-10V,
RG=3Ω, RL=15Ω
14.5
ns
Total Gate Charge (Note 1)
QG
5.06
nC
Gate-Source Charge
QGS
0.72
nC
Gate-Drain Charge
QGD
VDS=-15V, VGS=-4.5V,
ID=-1A
1.58
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=-1A
-0.85
-1
V
Maximum Continuous Drain-Source Diode
Forward Current
IS
-0.5
A
Notes: 1. Pulse width ≤300us, duty cycle ≤2%.
2. Surface mounted on 1 in
2 copper pad of FR4 board.



Html Pages

1 2 3 4


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link to Datasheet   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com