TIP107G-TN3-R datasheet(2/4 Pages) UTC

2 / 4 page

TIP107

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R203-023.D



ABSOLUTE MAXIMUM RATING (T

C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-100

Collector-Emitter Voltage

VCES

-100

Emitter-Base Voltage

VEBO

-5

-8

Collector Current

Pulse

ICP

-15

Base Current

-1

TO-220/TO-220F

TO-252

Collector Power Dissipation

TO-126/TO-126S

Junction Temperature

150

°C

Storage Temperature

TSTG

-65~+150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T

C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Emitter Sustaining Voltage

VCEO(SUS)

IC=-30mA, IB=0A

-100

Collector-Base Cut-Off Current

ICBO

VCB=-100V, IE=0A

-50

µA

Collector-Emitter Cut-Off Current

ICEO

VCE=-50V, IB=0A

µA

Emitter-Base Cut-Off Current

IEBO

VEB=-5V, IC=0A

-2

ON CHARACTERISTICS

hFE1

VCE=-4V, IC=-3A

1000

20000

DC Current Gain

hFE2

VCE=-4V, IC=-8A

200

IC=-3A, IB=-6mA

-2

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=-8A, IB=-80mA

-2.5

Base-Emitter ON Voltage

VBE(ON)

VCE=-4V, IC=-8A

-2.8

SMALL-SIGNAL CHARACTERISTICS

Output Capacitance

Cob

VCB=-10V, IE=0A, f=0.1MHZ

300

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