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MMBTA45G-AE3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # MMBTA45G-AE3-R
Description  HIGH VOLTAGE TRANSISTORS
PDF  4 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

MMBTA45G-AE3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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MMBTA44/45
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R206-007.F
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
MMBTA44
VCBO
500
V
MMBTA45
400
V
Collector-Emitter Voltage
MMBTA44
VCEO
400
V
MMBTA45
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Power Dissipation
TA=25°C
PD
350
mW
TC=25°C
1.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown
Voltage
MMBTA44
BVCBO
IC=100μA, IB=0
500
V
MMBTA45
400
V
Collector-Emitter Breakdown
Voltage
MMBTA44
BVCEO
IC =1mA, IB=0
400
V
MMBTA45
350
V
Emitter-Base Breakdown Voltage
BVEBO
IE=100μA, IC =0
6
V
Collector-Emitter Saturation Voltage
VCE(SAT)
IC =1mA, IB=0.1mA
0.4
V
IC =10mA, IB=1mA
0.5
V
IC =50mA, IB=5mA
0.75
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC 10mA, IB=1mA
0.75
V
Collector Cut-off Current
MMBTA44
ICBO
VCB=400V, IE =0
0.1
μA
MMBTA45
VCB=320V, IE =0
0.1
μA
Collector Cut-off Current
MMBTA44
ICES
VCE =400V, IB=0
0.5
μA
MMBTA45
VCE =320V, IB=0
0.5
μA
Emitter Cut-off Current
IEBO
VEB=4V, IC =0
0.1
μA
DC Current Gain (Note)
hFE1
VCE =10V, IC =1mA
40
hFE2
VCE =10V, IC =10mA
50
240
hFE3
VCE =10V, IC =50mA
45
hFE4
VCE =10V, IC =100mA
40
Current Gain Bandwidth Product
fT
VCE =20V, IC =10mA
f=100MHz
50
MHz
Output Capacitance
Cob
VCB=20V, IE =0, f=1MHz
7
pF
Note: Pulse test: PW<300μs, Duty Cycle<2%



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