IRFP3006PBF datasheet(2/9 Pages) IRF

2 / 9 page

IRFP3006PbF

www.irf.com

September 06, 2013

Static @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

VGS = 0V, ID = 250µA

V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

–––

0.07

––– V/°C Reference to 25°C, ID = 5mA

RDS(on)

Static Drain-to-Source On-Resistance

–––

2.1

2.5

 VGS = 10V, ID = 170A 

VGS(th)

Gate Threshold Voltage

2.0

–––

4.0

VDS = VGS, ID = 250µA

IDSS

Drain-to-Source Leakage Current

–––

µA VDS = 60V, VGS = 0V

–––

250

VDS = 60V, VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Forward Leakage

–––

100

nA VGS = 20V

Gate-to-Source Reverse Leakage

–––

-100

VGS = -20V

Internal Gate Resistance

–––

2.0

–––



Dynamic @ TJ = 25°C (unless otherwise specified)

Symbol

Parameter

Min.

Typ. Max. Units

Conditions

gfs

Forward Transconductance

280

–––

VDS = 25V, ID = 170A

Total Gate Charge

–––

200

300

ID = 170A

Qgs

Gate-to-Source Charge

–––

VDS =30V

Qgd

Gate-to-Drain ("Miller") Charge

–––

VGS = 10V 

Qsync

Total Gate Charge Sync. (Qg - Qgd)

–––

140

–––

ID = 170A, VDS =0V, VGS = 10V

td(on)

Turn-On Delay Time

–––

VDD = 39V

Rise Time

–––

182

–––

ID = 170A

td(off)

Turn-Off Delay Time

–––

118

–––

RG = 2.7

Fall Time

–––

189

–––

VGS = 10V 

Ciss

Input Capacitance

––– 8970 –––

VGS = 0V

Coss

Output Capacitance

––– 1020 –––

VDS = 50V

Crss

Reverse Transfer Capacitance

–––

534

–––

ƒ = 1.0 MHz, See Fig. 5

Coss eff. (ER) Effective Output Capacitance

(Energy Related)

––– 1480 –––

VGS = 0V, VDS = 0V to 48V 

See Fig. 11

Coss eff. (TR) Effective Output Capacitance

(Time Related)

––– 1920 –––

VGS = 0V, VDS = 0V to 48V 

Diode Characteristics

Symbol

Parameter

Min.

Typ. Max. Units

Conditions

Continuous Source Current

–––

257

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

–––

1028

integral reverse

(Body Diode) 

p-n junction diode.

VSD

Diode Forward Voltage

–––

1.3

TJ = 25°C, IS = 170A, VGS = 0V 

trr

Reverse Recovery Time

–––

ns TJ = 25°C

–––

TJ = 125°C

Qrr

Reverse Recovery Charge

–––

nC TJ = 25°C

–––

TJ = 125°C

IRRM

Reverse Recovery Current

–––

2.4

–––

TJ = 25°C

Notes:



Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A.Note that

current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140)



Repetitive rating; pulse width limited by max. Junction temperature.



Limited by TJmax, starting TJ = 25°C, L = 0.022mH, RG = 50, IAS = 170A,VGS =10V. Part not Recommended for use above

this value.



ISD ≤ 170A, di/dt ≤ 1360A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.



Pulse width ≤ 400µs; duty cycle ≤ 2%.



Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.



Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.



R is measured at TJ approximately 90°C.

* All spec data and curves based on (TO-220 Pak -IRFB3006PbF) Datasheet.

VR = 51V,

IF = 170A

di/dt = 100A/µs 

IRFP3006PBF Datasheet(PDF) 2 Page - International Rectifier

IRFP3006PBF Datasheet(HTML) 2 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL