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M30620FCAFP Datasheet(PDF) 191 Page - Mitsubishi Electric Semiconductor |
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M30620FCAFP Datasheet(HTML) 191 Page - Mitsubishi Electric Semiconductor |
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191 / 274 page  Mitsubishi microcomputers M16C / 62A Group SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER Electrical characteristics (Vcc = 3V) 191 Symbol VOH HIGH output voltage VOH VOL LOW output voltage LOW output voltage VOL HIGH output voltage Standard Typ. Unit Measuring condition V V XOUT 2.5 2.5 V 0.5 V XOUT 0.5 0.5 MinMax. 2.5 Parameter IOH=-1mA IOH=-0.1mA IOH=-50 µA IOL=1mA IOL=0.1mA IOL=50 µA P00 to P07,P10 to P17,P20 to P27, P00 to P07,P10 to P17,P20 to P27, P30 to P37,P40 to P47,P50 to P57, P30 to P37,P40 to P47,P50 to P57, P60 to P67,P72 to P77,P80 to P84, HIGHPOWER LOWPOWER P86,P87,P90 to P97,P100 to P107 HIGHPOWER LOWPOWER P60 to P67,P70 to P77,P80 to P84, P86,P87,P90 to P97,P100 to P107 HIGHPOWER LOWPOWER HIGH output voltageXCOUT With no load applied With no load applied 3.0 1.6 V Hysteresis Hysteresis HIGH input current IIH LOW input current I IL V RAM RAM retention voltage Icc Power supply current VT+-VT- VT+-VT- 0.2 0.8 V 0.21.8V P00 to P07,P10 to P17,P20 to P27, P30 to P37,P40 to P47,P50 to P57, P60 to P67,P70 to P77,P80 to P87, P90 to P97,P100 to P107, 4.0 µA µA When clock is stopped2.0V RESET XIN, RESET, CNVss, BYTE VI=3V VI=0V -4.0 P00 to P07,P10 to P17,P20 to P27, P30 to P37,P40 to P47,P50 to P57, P60 to P67,P70 to P77,P80 to P87, P90 to P97,P100 to P107, XIN, RESET, CNVss, BYTE Square wave f(XCIN)=32kHz 40.0 µA R fXIN R fXCIN Feedback resistance XIN Feedback resistance XCIN 10.0 3.0 M M Square wave, no division f(XIN)=10MHz mA 8.521.25 Mask ROM version R PULLUP 120.0 k P00 to P07,P10 to P17,P20 to P27, P30 to P37,P40 to P47,P50 to P57, P60 to P67,P72 to P77,P80 to P84, P86,P87,P90 to P97,P100 to P107 LOW output voltage V XCOUT 0 0 With no load applied With no load applied HIGHPOWER LOWPOWER VI=0V 66.0 500.0 In single-chip mode, the output pins are open and other pins are VSS Pull-up resistance Ω Ω Ω Square wave, no division f(XIN)=10MHz mA 12.0 21.25 Flash memory 5V version Mask ROM version Square wave, in RAM f(XCIN)=32kHz µA Flash memory 5V version CLK4,TA2OUT to TA4OUT,NMI, TB0IN to TB5IN, INT0 to INT5, ADTRG, CTS0 to CTS2, CLK0 to HOLD, RDY, TA0IN to TA4IN, KI0 to KI3, RxD0 to RxD2, SIN3, SIN4 1.0 µA 20.0 0.9 µA 2.8 µA f(XCIN)=32kHz f(XCIN)=32kHz Ta=85 °C when clock is stopped Ta=25 °C when clock is stopped When a WAITinstruction is executed. Oscillation capacity High (Note3) When a WAIT instruction is executed. Oscillation capacity Low (Note3) Square wave, in flash memory f(XCIN)=32kHz 800 µA Flash memory 5V version 40.0 Note 1: Specify a product of -40 °C to 85°C to use it. Note 2: 10 MHZ for the mask ROM version and flash memory 5V version. Note 3: With one timer operated using fC32. VCC = 3V Table 1.23.23. Electrical characteristics (referenced to VCC = 2.7 to 3.3V, VSS = 0V at Ta = – 20oC to 85oC / – 40oC to 85oC(Note1), f(XIN) = 10MHZ(Note 2) with wait unless otherwise specified) |
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