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LTC2953

2953f

ELECTRICAL CHARACTERISTICS The ● denotes the speciﬁcations which apply over the full operating

temperature range, otherwise speciﬁcations are at TA = 25°C. VIN = 2.7V to 27V, unless otherwise noted (Note 2).

Note 1: Stresses beyond those listed under Absolute Maximum Ratings

may cause permanent damage to the device. Exposure to any Absolute

Maximum Rating condition for extended periods may affect device

reliability and lifetime.

Note 2: All currents into pins are positive; all voltages are referenced to

GND unless otherwise noted.

Note 3: The Enable Lock Out time is designed to allow an application to

properly power down such that the next power up sequence starts from a

consistent powered down conﬁguration. ⎯P⎯B is ignored during this lock out

time. This time delay does not include tDB, ON.

Note 4: To manually force a release of the EN/⎯E⎯N pin, either ⎯P⎯B or UVLO

must be held low for at least tPD, Min (internal default power down timer) +

tPDT (adjustable by placing external capacitor at PDT pin).

Note 5: The ⎯K⎯I⎯L⎯L turn on blanking timer period (tKILL, ON BLANK) is the

waiting period immediately after enable output is asserted. This blanking

time allows sufﬁcient time for the DC/DC converter and the μP to perform

power up tasks. The ⎯K⎯I⎯L⎯L, ⎯P⎯B and UVLO inputs are ignored during this

period. If ⎯K⎯I⎯L⎯L remains low at the end of this blanking period, the enable

output is released, thus turning off system power.

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

IPFI(LKG)

⎯P⎯F⎯I Leakage Current

VPFI = 0.5V

VPFI = 27V

●

±10

±1

μA

IPFO(LKG)

⎯P⎯FO Leakage Current

VPFO = 1V

VPFO = 40V

●

±10

±1

μA

IUVLO(LKG)

UVLO Leakage Current

VUVLO = 0.5V

VUVLO = 27V

●

±10

±1

μA

IVM(LKG)

VM Input Leakage Current

VM = 0.5V

●

±10

IRST(LKG)

⎯R⎯S⎯T Output Leakage Current

VRST = 3V

●

±0.1

μA

tPFI

⎯P⎯F⎯I Delay to ⎯P⎯F⎯O

●

100

200

μs

tRST

Reset Timeout Period

●

140

200

260

tuv

VM Under Voltage Detect to ⎯R⎯S⎯T

VM Less Than VM(TH) By More Than 1%

250

μs

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