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IRF7413 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7413 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7413 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 16 ––– ––– SVDS = 10V, ID = 7.2A Qg Total Gate Charge ––– 44 66 ID = 7.2A Qgs Gate-to-Source Charge ––– 7.9 ––– nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 9.2 ––– VGS = 10V, td(on) Turn-On Delay Time ––– 8.8 ––– VDD = 100V tr Rise Time ––– 8.0 ––– ID = 7.2A td(off) Turn-Off Delay Time ––– 35 ––– RG = 6.2Ω tf Fall Time ––– 14 ––– VGS = 10V Ciss Input Capacitance ––– 1670 ––– VGS = 0V Coss Output Capacitance ––– 670 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 2290 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 680 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 1020 ––– VGS = 0V, VDS = 0V to 24V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 120 mJ IAR Avalanche Current ––– 7.2 A Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 7.2A, VGS = 0V trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 7.2A Qrr Reverse RecoveryCharge ––– 74 110 nC di/dt = 100A/µs Diode Characteristics 3.1 96 A Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.03 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 11 VGS = 10V, ID = 7.2A ––– ––– 18 VGS = 4.5V, ID = 6.0A VGS(th) Gate Threshold Voltage 1.0 ––– ––– VVDS = VGS, ID = 250µA ––– ––– 1.0 µA VDS = 24V, VGS = 0V ––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V |
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