2SB1219A-R datasheet(2/2 Pages) KEXIN

2 / 2 page

SMD Type

www.kexin.com.cn

Transistors

PNP Transistors

2SB1219A

■

Typical Characterisitics

VCE

I B

VCE(sat) IC

VBE(sat)

hFE

Cob VCB

VCER RBE

120

Ambient temperature T a (°C)

240

200

160

120

−20

−4

−8

−16

−12

Collector to emitter voltage V CE (V)

−800

−700

−600

−500

−400

−300

−200

−100

T a = 25°

IB =

−10 mA −9 mA

−8 mA

−7 mA

–6 mA

−5 mA

−4 mA

−3 mA

−2 mA

−1 mA

−10

−8

−6

−4

−2

Base current I B (mA)

−800

−700

−600

−500

−400

−300

−200

−100

V CE =

−10 V

T a = 25°

− 0.01

− 0.03

− 0.01− 0.03

− 0.1

− 0.3

−1

−3

−10

−30

−100

− 0.1 − 0.3 −1

−3

−10

Collector current I C (A)

IC / IB = 10

T a = 75°

25°

−25°C

− 0.01− 0.03

−1

−3

−10

−30

−100

− 0.1 − 0.3 −1

−3

−10

Collector current I C (A)

IC /IB = 10

T a =

−25°C

75°

25°

− 0.01

− 0.03

− 0.1

− 0.3

600

500

400

300

200

100

V CE =

−10 V

T a = 75°

25°

−25°C

− 0.01− 0.03 − 0.1 − 0.3 −1

−3

−10

Collector current IC (A)

100

240

200

160

120

Emitter current I E (mA)

V CB =

−10 V

T a = 25°

−1

−3

−10

−30

−100

−50

−20

−5

−2

Collector to base voltage V CB (V)

I E = 0

f= 1 MHz

T a = 25°

100 300 1 000

Base to emitter resistance R BE (kΩ)

−120

−100

−80

−60

−40

−20

IC =

−2 mA

Ta = 25°

2SB1219A

2SB1219A-R Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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