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2SB1169-R Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB1169-R Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 2 page  SMD Type www.kexin.com.cn 1 Transistors PNP Transistors 2SB1169 ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Low collector-emitter saturation voltage VCE(sat) 2.3 0.60+ 0.1 - 0.1 6.50+0.15 -0.15 0.80+0.1 -0.1 4 .60 +0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 0.127 max TO-252 Unit: mm 1 Base 2 Collector 3 Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -60 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -1 Collector current -Pulse ICP -2 Collector Power Dissipation 15 Ta = 25℃ 1.3 Junction Temperature TJ 150 Storage Temperature range Tstg -55 to 150 V ℃ A PC W ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -60 Collector- emitter breakdown voltage VCEO Ic= -30 mA, IB=0 -60 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 Collector-base cut-off current ICBO VCB= -60V , IE=0 -0.1 mA Collector-emitter cut-off current ICES VCE = −60 V, IB = 0 -200 Collector-emitter cut-off current ICEO VCE = −30 V, IB = 0 -300 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 mA Collector-emitter saturation voltage VCE(sat) IC=-1 A, IB=-125mA -1 Base - emitter saturation voltage VBE(sat) IC=-1 A, IB=-125mA -1.2 Base - emitter voltage VBE VCE= -4V, IC= -1 A -1.3 VCE= -4V, IC= -200 mA 40 450 VCE= -4V, IC= -1 A 15 Turn-ON Time ton 0.5 Storage Time tstg 1.2 Fall Time tf 0.3 Transition frequency fT VCE= -10V, IC= -500mA,f=10MHz 40 MHz IC = −1 A, IB1 = −50 mA, IB2 = 50 mA VCC = −50 V us V uA V DC current gain hFE ■ Classification of hfe(1) Type 2SB1169-R 2SB1169-Q 2SB1169-P 2SB1169-O Range 40-90 70-150 120-250 200-450 |
Similar Part No. - 2SB1169-R |
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Similar Description - 2SB1169-R |
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