HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6452

Issued Date : 1993.02.10

Revised Date : 2002.04.18

Page No. : 1/3

HTL195

HSMC Product Specification

HTL195

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTL195 is designed for high voltage low power switching

applications especially for use in telephone and telecommunication

circuits.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ...................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ....................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... -500 V

VCEO Collector to Emitter Voltage ................................................................................... -500 V

IC Collector Current ...................................................................................................... -300 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-500

-

-

V

IC=-100uA, IE=0

BVCEO

-500

-

-

V

IC=-1mA, IB=0

ICBO

-

-

-10

uA

VCB=-500V, IE=0

ICEO

-

-

-1

uA

VCE=-100V, IB=0

IEBO

-

-

-200

nA

VEB=-6V, IC=0

*VCE(sat)1

-

-

-500

mV

IC=-20mA, IB=-2mA

*VCE(sat)2

-

-

-3

V

IC=-80mA, IB=-4mA

*VBE(sat)

-

-

-900

mV

IC=-20mA, IB=-2mA

*hFE1

50

-

-

VCE=-10V, IC=-1mA

*hFE2

50

-

300

VCE=-10V, IC=-20mA

*hFE3

40

-

-

VCE=-10V, IC=-80mA

fT

10

-

-

MHz

VCE=-20V, IE=-10mA, f=1MHz

Cob

-

-

30

pF

VCB=-20V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-92