HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6454-B

Issued Date : 1993.02.24

Revised Date : 2000.10.01

Page No. : 1/3

HSMC Product Specification

HTL145

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTL145 is designed for high voltage low power switching

applications especially for use in telephone and telecommunication

circuits.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ..................................................................................... 150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ...................................................................................... 1 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ...................................................................................... 500 V

VCEO Collector to Emitter Voltage ................................................................................... 500 V

IC Collector Current ....................................................................................................... 300 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

500

-

-

V

IC=100uA

BVCEO

500

-

-

V

IC=1mA

ICBO

-

-

10

uA

VCB=500V

ICER

-

-

1

uA

VCE=200V

IEBO

-

-

200

nA

VEB=6V

*VCE(sat)1

-

-

500

mV

IC=20mA, IB=2mA

*VCE(sat)2

-

-

3

V

IC=100mA, IB=4mA

*VBE(sat)

-

-

900

mV

IC=20mA, IB=2mA

*hFE1

50

-

-

VCE=10V, IC=1mA

*hFE2

50

-

300

VCE=10V, IC=20mA

*hFE3

40

-

-

VCE=10V, IC=80mA

fT

10

-

-

MHz

VCE=20V, IE=10mA

Cob

-

-

30

pF

VCB=20V, f=1MHZ

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%