HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6733

Issued Date : 1994.08.10

Revised Date : 2002.05.07

Page No. : 1/3

HTIP42C

HSMC Product Specification

HTIP42C

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP42C is designed for use in general purpose amplifier and

switching applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) ..................................................................................... 65 W

Total Power Dissipation (Ta=25

°C) ....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage.................................................................................... -100 V

BVCEO Collector to Emitter Voltage................................................................................. -100 V

BVEBO Emitter to Base Voltage........................................................................................... -5 V

IC Collector Current.............................................................................................................. -6 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-100

-

-

V

IC=-1mA, IE=0

BVCEO

-100

-

-

V

IC=-30mA, IB=0

ICES

-

-

-400

uA

VCE=-100V

ICEO

-

-

-700

uA

VCE=-60V

IEBO

-

-

-1

mA

VEB=-5V

*VCE(sat)

-

-

-1.5

V

IC=-6A, IB=-600mA

*VBE(on)

-

-

-2

V

IC=-6A, VCE=-4V

*hFE1

30

-

-

IC=-0.3A, VCE=-4V

*hFE2

15

-

75

IC=-3A, VCE=-4V

fT

3

-

-

MHz

IC=-0.1A, VCE=-5V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-220