CSB892 datasheet(1/4 Pages) CDIL

Part #	CSB892

Description	PNP EPITAXIAL PLANAR SILICON TRANSISTOR

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CSB892

TO-92L

Plastic Package

Power Supplies, Relay Drivers, Lamp Drivers and Automotive Wiring Applications

Complementary CSD1207

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC )

DESCRIPTION

SYMBOL

UNITS

Collector Base Voltage

VCBO

V

Collector Emitter Voltage

VCEO

V

Emitter Base Voltage

VEBO

V

Collector Current

IC

A

Peak Collector Current

ICP

A

Collector Power Dissipation

PC

W

Junction Temperature

Tj

ºC

Storage Temperature

Tstg

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Base Voltage

VCBO

IC=10µA, IE=0

60

V

Collector Emitter Voltage

VCEO

IC=1mA, IB=0

50

V

Emitter Base Voltage

VEBO

IE=10µA, IC=0

6

V

Collector Cut Off Current

ICBO

VCB =50V, IE=0

100

nA

Emitter Cut Off Current

IEBO

VEB=4V, IC = 0

100

nA

DC Current Gain

*hFE

IC =100mA, VCE=2V

100

560

hFE

IC =1.5A, VCE=2V

40

Collector Emitter Saturation Voltage

VCE (sat)

IC=1A, IB=50mA

0.7

V

Base Emitter Saturation Voltage

VBE (sat)

IC=1A, IB=50mA

1.2

V

DYNAMIC CHARACTERISTICS

Transition Frequency

fT

VCE=10V, IC=50mA

150

MHz

Output Capacitance

Cob

VCB=10V,IE=0, f=1MHz

12

pF

CLASSIFICATION

R

S

*hFE

100 - 200

140 - 280

CSB892Rev020206E

VALUE

60

50

6

2

1

150

4

- 55 to +150

280 - 560

U

200 - 400

T

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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