CSC1815 datasheet(1/4 Pages) CDIL

Part #	CSC1815

Description	NPN EPITAXIAL PLANAR SILICON TRANSISTOR

PDF	4 Pages

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CSC1815

TO-92

Plastic Package

Audio Frequency General Purpose and Driver Stage Amplifier Applications.

Complementary CSA1015

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNITS

Collector Base Voltage

VCBO

60

V

Collector Emitter Voltage

VCEO

50

V

Emitter Base Voltage

VEBO

5

V

Collector Current Continuous

IC

150

mA

Base Current

IB

50

mA

Collector Power Dissipation

PC

625

mW

Operating And Storage Junction

Tj, Tstg

-55 to +125

ºC

Temperature Range

THERMAL RESISTANCE

Junction to case

Rth(j-c)

250

ºC/W

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Cut off Current

ICBO

VCB =60V, IE=0

100

nA

Emitter Cut off Current

IEBO

VEB=5V, IC = 0

100

nA

DC Current Gain

*hFE

IC =2mA, VCE=6V

70

700

hFE

IC =150mA, VCE=6V

25

Collector Emitter Saturation Voltage

VCE(sat)

IC=100mA, IB= 10mA

0.25

V

Base Emitter Saturation Voltage

VBE(sat)

IC=100mA, IB= 10mA

1.0

V

Dynamic Characteristics

Transition Frequency

ft

VCE=10V, IC=1mA,

80

MHz

f=100MHz

Collector Output Capacitance

Cob

VCB=10V,IE=0,

3

pF

f=1MHz

Base Spreading Resistance

rbb'

VCB=10V, IE=1mA,

50

Ω

f=30MHz

Noise Figure

NF

VCE=6V, IC=0.1mA,

10

dB

Rg=10KΩ, f=1KHz

CLASSIFICATION

O

Y

BL

*hFE

70 - 140

120 - 240

350 - 700

CSC1815REV_3 281202D

GR

200 - 400

E C

B

Continental Device India Limited

Datasheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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