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2SD1782G-R-AE3-R Datasheet(PDF) 1 Page - Unisonic Technologies |
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2SD1782G-R-AE3-R Datasheet(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page  UNISONIC TECHNOLOGIES CO., LTD 2SD1782 Preliminary NPN EPITAXIAL SILICON TRANSISTOR www.unisonic.com.tw 1 of 3 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R206-107.a POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1782 is an NPN silicon transistor. it uses UTC’s advanced technology to provide customers with high collector-emitter breakdown voltage, low collector-emitter saturation voltage and high DC current gain, etc. FEATURES * High collector-emitter breakdown voltage * Low collector-emitter saturation voltage * High DC current gain ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 2SD1782L-x-AE3-R 2SD1782G-x-AE3-R SOT-23 E B C Tape Reel MARKING (For SOT-23 Package) D17 L: Lead Free G: Halogen Free |
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