STTH10LCD06FP datasheet(2/10 Pages) STMICROELECTRONICS

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Characteristics

STTH10LCD06

2/10

Doc ID 15858 Rev 2

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.20 x IF(AV) + 0.040 x IF

(RMS)

Table 2.

Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS)

Forward current rms

DPAK

TO-220AC, TO-220FPAC, D2PAK

IF(AV)

Average forward current,

δ = 0.5

Tc = 105 °C

TO-220AC, DPAK, D2PAK

Tc = 55 °C

TO-220FPAC,

IFSM

Surge non repetitive forward current tp = 10 ms sinusoidal

100

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature(1)

175

°C

condition to avoid thermal runaway for a diode on its own heatsink

tot

---------------

th j

–

()

--------------------------

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC, DPAK, D2PAK

3.5

°C/W

TO-220FPAC

Table 4.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

130

(2)

Forward voltage drop

Tj = 25 °C

IF = 10 A

Tj = 150 °C

1.3

1.6

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Table 5.

Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

-35

IRM

Reverse recovery current

IF = 10 A, dIF/dt = -50 A/µs,

VR = 400 V, Tj = 125 °C

-2.0

2.8

tfr

Forward recovery time

IF = 10 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

230

VFP

Forward recovery voltage

IF = 10 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

-4-

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