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IXTY08N100D2 Datasheet(PDF) 4 Page - IXYS Corporation

Part # IXTY08N100D2
Description  Depletion Mode MOSFET
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTY08N100D2 Datasheet(HTML) 4 Page - IXYS Corporation

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IXTY08N100D2
IXTA08N100D2
IXTP08N100D2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Normalized RDS(on) vs. Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGS = 0V
I D = 0.4A
Fig. 8. RDS(on) Normalized to ID = 0.4A Value
vs. Drain Current
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID - Amperes
VGS = 0V
5V - - - -
TJ = 125ºC
TJ = 25ºC
Fig. 9. Input Admittance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0.5
VGS - Volts
TJ = 125ºC
25ºC
- 40ºC
VDS = 30V
Fig. 10. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID - Amperes
TJ = - 40ºC
VDS = 30V
25ºC
125ºC
Fig. 12. Forward Voltage Drop of Intrinsic Diode
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.4
0.5
0.6
0.7
0.8
0.9
VSD - Volts
TJ = 125ºC
VGS = -10V
TJ = 25ºC
Fig. 11. Breakdown and Threshold Voltages
vs. Junction Temperature
0.8
0.9
1.0
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
VGS(off) @ VDS = 25V
BVDSX @ VGS = - 5V


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