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STM32F373C8 Datasheet(PDF) 57 Page - STMicroelectronics |
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STM32F373C8 Datasheet(HTML) 57 Page - STMicroelectronics |
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57 / 128 page ![]() STM32F37x Electrical characteristics Doc ID 022691 Rev 3 57/128 6.3.3 Embedded reset and power control block characteristics The parameters given in Table 24 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 22. Table 24. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPOR/PDR (1) 1. The PDR detector monitors VDD, VDDA and VDDSD12 (if kept enabled in the option bytes). The POR detector monitors only VDD. Power on/power down reset threshold Falling edge 1.8(2) 2. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst (3) PDR hysteresis 40 mV tRSTTEMPO (3) 3. Guaranteed by design, not tested in production. POR reset temporization 1.5 2.5 4.5 ms Table 25. Programmable voltage detector characteristics Symbol Parameter Conditions Min(1) 1. Data based on characterization results only, not tested in production. Typ Max(1) Unit VPVD0 PVD threshold 0 Rising edge 2.1 2.18 2.26 V Falling edge 2 2.08 2.16 V VPVD1 PVD threshold 1 Rising edge 2.19 2.28 2.37 V Falling edge 2.09 2.18 2.27 V VPVD2 PVD threshold 2 Rising edge 2.28 2.38 2.48 V Falling edge 2.18 2.28 2.38 V VPVD3 PVD threshold 3 Rising edge 2.38 2.48 2.58 V Falling edge 2.28 2.38 2.48 V VPVD4 PVD threshold 4 Rising edge 2.47 2.58 2.69 V Falling edge 2.37 2.48 2.59 V VPVD5 PVD threshold 5 Rising edge 2.57 2.68 2.79 V Falling edge 2.47 2.58 2.69 V VPVD6 PVD threshold 6 Rising edge 2.66 2.78 2.9 V Falling edge 2.56 2.68 2.8 V VPVD7 PVD threshold 7 Rising edge 2.76 2.88 3 V Falling edge 2.66 2.78 2.9 V VPVDhyst (2) 2. Guaranteed by design, not tested in production. PVD hysteresis 100 mV IDD(PVD)(2) PVD current consumption 0.15 0.26 µA |
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