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MAT14ARZ Datasheet(PDF) 1 Page - Analog Devices |
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MAT14ARZ Datasheet(HTML) 1 Page - Analog Devices |
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1 / 12 page ![]() Matched Monolithic Quad Transistor MAT14 Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibilityisassumedbyAnalogDevicesforitsuse,norforanyinfringementsofpatentsorother rightsofthirdpartiesthatmayresultfromitsuse.Specificationssubjecttochangewithoutnotice.No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved. FEATURES Low offset voltage: 400 µV maximum High current gain: 300 minimum Excellent current gain match: 4% maximum Low voltage noise density at 100 Hz, 1 mA 3 nV/√Hz maximum Excellent log conformance Bulk resistance (r BE) = 0.6 Ω maximum Guaranteed matching for all transistors APPLICATIONS Low noise op amp front end Current mirror and current sink/source Low noise instrumentation amplifiers Voltage controlled attenuators Log amplifiers PIN CONFIGURATION C1 1 B1 2 E1 3 SUB 4 C4 14 B4 13 E4 12 SUB 11 E2 5 E3 10 B2 6 B3 9 C2 7 C3 8 MAT14 TOP VIEW (Not to Scale) Figure 1. GENERAL DESCRIPTION The MAT14 is a quad monolithic NPN transistor that offers excellent parametric matching for precision amplifier and nonlinear circuit applications. Performance characteristics of the MAT14 include high gain (300 minimum) over a wide range of collector current, low noise (3 nV/√Hz maximum at 100 Hz, IC = 1 mA), and excellent logarithmic conformance. The MAT14 also features a low offset voltage of 100 µV typical and tight current gain matching to within 4%. Each transistor of the MAT14 is individually tested to data sheet specifications. For matching parameters (offset voltage, input offset current, and gain match), each of the dual transistor combinations are verified to meet stated limits. Device performance is guaranteed at an ambient temperature of 25°C and over the industrial tem- perature range. The long-term stability of matching parameters is guaranteed by the protection diodes across the base emitter junction of each transistor. These diodes prevent degradation of beta and matching characteristics due to reverse bias, base emitter current. The superior logarithmic conformance and accurate matching characteristics of the MAT14 make it an excellent choice for use in log and antilog circuits. The MAT14 is an ideal choice in applications where low noise and high gain are required. |
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