OP249

–5–

REV. C

DICE CHARACTERISTICS

WAFER TEST LIMITS

OP249GBC

Parameter

Symbol

Conditions

Limits

Units

Offset Voltage

0.5

mV max

Offset Voltage Temperature Coefficient

–40

°C ≤ T

6.0

µV/°C max

Input Bias Current

225

pA max

Input Offset Current

75

pA max

Input Voltage Range

IVR

(Note 1)

±11

V min

Common-Mode Rejection

CMR

±11 V

76

dB min

Power Supply Rejection Ratio

PSRR

±4.5 V to ±18 V

100

µV/V max

Large-Signal Voltage Gain

250

V/mV min

Output Voltage Swing

Ω±12.0

V min

Short-Circuit Current Limit

Output Shorted to Ground

±20/±60

mA min/max

Supply Current

7.0

mA max

Slew Rate

SR

Ω, C

16.5

V/

µs min

NOTES

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

OUT (A)

–IN (A)

+IN (A)

V–

+IN (B)

–IN (B)

OUT (B)

V+

DIE SIZE 0.072

0.112 inch, 8,064 sq. mils

(1.83

2.84 mm, 5.2 sq. mm)