ADP198ACPZ-R7 datasheet(14/16 Pages) AD

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ADP198

Data Sheet

Rev. D | Page 14 of 16

TIMING

Turn-on delay is defined as the delta between the time that VEN

reaches >1.2 V and when VOUT rises to ~10% of its final value. The

ADP198 includes circuitry to have typical 10 µs turn-on delay at

3.6 V VIN to limit the VIN inrush current.

The rise time is defined as the delta between the time from

10% to 90% of VOUT reaching its final value. It is dependent on

the RC time constant where C = load capacitance (CLOAD) and

R = RDSON||RLOAD. Because RDSON is usually smaller than RLOAD,

an adequate approximation for RC is RDSON × CLOAD. An input

or load capacitor is not needed for the ADP198; however, capacitors

can be used to suppress noise on the board. If significant load

capacitance is connected, inrush current may be a concern.

Figure 27 through Figure 30 show the turn-on delay and output

rise time for each of the four settings on SEL0 and SEL1.

CH1 200mA

ΩBW

CH3 2.00V BW

A CH3

1.48V

CH2 2.00V BW M20.0µs

T 10.20%

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

Figure 27. Typical Rise Time and Inrush Current,

CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 00

CH1 200mA

ΩBW

CH3 2.00V BW

A CH3

1.48V

CH2 2.00V BW M40.0µs

T 10.20%

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

Figure 28. Typical Rise Time and Inrush Current,

CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 01

CH1 200mA

ΩBW

CH3 2.00V BW

A CH3

1.48V

CH2 2.00V BW M100µs

T 10.20%

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

Figure 29. Typical Rise Time and Inrush Current,

CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 10

CH1 200mA

ΩBW

CH3 2.00V BW

A CH3

1.48V

CH2 2.00V BW M200µs

T 10.20%

INPUT CURRENT

OUTPUT VOLTAGE

ENABLE

Figure 30. Typical Rise Time and Inrush Current,

CLOAD = 1 µF, VIN = 3.6 V, ILOAD = 200 mA, Code 11

The turn-off time is defined as the delta between the time from

90% to 10% of VOUT reaching its final value. It is also dependent on

the RC time constant.

Table 6. Start-Up Time Pin Settings

SEL1

SEL0

Start-Up Time (μs)

200

450

1100

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