IXDN614PI datasheet(5/14 Pages) CLARE

5 / 14 page

IXD_614

R02

www.clare.com

1.6 Electrical Characteristics: TA = - 40°C to +125°C

Test Conditions: 4.5V < VCC < 35V.

1.7 Thermal Characteristics

Parameter

Conditions

Symbol

Minimum

Maximum

Units

Input Voltage, High

4.5V < VCC < 18V

VIH

3.3

Input Voltage, Low

4.5V < VCC < 18V

VIL

-0.65

Input Current

0V < VIN < VCC

IIN

-±10

A

Output Voltage, High

VOH

VCC-0.025

Output Voltage, Low

VOL

0.025

Output Resistance, High State

VCC=18V, IOUT=-100mA

ROH

-1.5



Output Resistance, Low State

VCC=18V, IOUT=100mA

ROL

-1.2

Output Current, Continuous

Limited by package power

dissipation

IDC

-±1

Rise Time

CLOAD=15nF, VCC=18V

-50

Fall Time

CLOAD=15nF, VCC=18V

-40

On-Time Propagation Delay

CLOAD=15nF, VCC=18V

tONDELAY

-90

Off-Time Propagation Delay

CLOAD=15nF, VCC=18V

tOFFDELAY

-90

Enable to Output-High Delay Time

IXDD614 only

tENOH

-75

Disable to High Impedance State Delay Time

IXDD614 only

tDOLD

-85

Power Supply Current

VCC=18V, VIN=3.5V

ICC

-3

VCC=18V, VIN=0V

-150

A

VCC=18V, VIN=VCC

-150

Package

Parameter

Symbol

Rating

Units

CI (5-Pin TO-220)

Thermal Resistance, Junction-to-Ambient



°C/W

PI (8-Pin DIP)

125

SI (8-Pin Power SOIC)

YI (5-Pin TO-263)

CI (5-Pin TO-220)

Thermal Resistance, Junction-to-Case



°C/W

SI (8-Pin Power SOIC)

YI (5-Pin TO-263)

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