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UD4809-TN3-R Datasheet(PDF) 2 Page - Unisonic Technologies

Part # UD4809-TN3-R
Description  N-CHANNEL ENHANCEMENT MODE
PDF  5 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UD4809-TN3-R Datasheet(HTML) 2 Page - Unisonic Technologies

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UD4809
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-177.A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
9.0
A
Drain to Source dv/dt
dv/dt
6.0
V/ns
Power Dissipation (Note 3)
PD
1.3
W
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to-Ambient (Note 3)
θJA
116
℃
/W
Junction-to-Case
θJC
2.9
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250µA
30
V
Drain-Source Leakage Current
IDSS
VDS =24V, VGS =0 V
1.0
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20V
±100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1.5
2.5
V
ID =30 A
7.0
9.0
VGS =10~11.5 V
ID =15 A
7.0
mΩ
ID =30 A
12
14
Static Drain-Source On-Resistance
(Note 2)
RDS(ON)
VGS =4.5 V
ID =15 A
11
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
1456
Output Capacitance
COSS
315
Reverse Transfer Capacitance
CRSS
VDS =12 V, VGS =0V, f=1MHz
200
pF
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
12.3
Turn-ON Rise Time
tR
21.3
Turn-OFF Delay Time
tD(OFF)
15.1
Turn-OFF Fall-Time
tF
VGS=4.5V,VDS=15V, ID =15A,
RG =3.0Ω
5.3
ns
Turn-ON Delay Time
tD(ON)
7.0
Turn-ON Rise Time
tR
22.7
Turn-OFF Delay Time
tD(OFF)
25.3
Turn-OFF Fall-Time
tF
VGS=11.5V,VDS=15V, ID =15A,
RG =3.0Ω
2.8
ns
Total Gate Charge
QG(TOT)
11
13
Threshold Gate Charge
QG(TH)
2.5
Gate-Source Charge
QGS
4.8
Gate-Drain Charge
QGD
VDS =15V, VGS =4.5V, ID =30A
5.0
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS=30A,VGS=0V
0.95
1.2
V
Source Current (Body Diode)
IS
43
A
Reverse Recovery Time
tRR
19.5
ns
Reverse Recovery Time
QRR
VGS = 0 V, dIs/dt= 100 A/ s,
IS = 30 A
9.2
nC
Note: 1. Pulse width limited by TJ(MAX)
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
3. Surface-mounted on FR4 board using the minimum recommended pad size.



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