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TIP35 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIP35 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP35/35A/35B/35C DESCRIPTION ・With TO-3PN package ・Complement to type TIP36/36A/36B/36C ・DC current gain hFE=25(Min)@IC=1.5A APPLICATIONS ・Designed for use in general purpose power amplifier and switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT TIP35 40 TIP35A 60 TIP35B 80 VCBO Collector-base voltage TIP35C Open emitter 100 V TIP35 40 TIP35A 60 TIP35B 80 VCEO Collector-emitter voltage TIP35C Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 25 A ICM Collector current-peak 40 A IB Base current 5 A PC Collector power dissipation TC=25℃ 125 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 1.0 ℃/W Fig.1 simplified outline (TO-3PN) and symbol |
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