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BU4530AL Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU4530AL Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU4530AL ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A ;IB= 2.22A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A ;IB= 2.22A 1.01 V ICES Collector Cutoff Current VCEV=1500V,VBE(off)=0 VCEV=1500V,VBE(off)=0;TC=125℃ 1.0 2.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 12 hFE-2 DC Current Gain IC= 10A ; VCE= 5V 4.8 8.5 Switching times; Resistive load ts Storage Time 4.0 μs tf Fall Time IC= 9A; IB1= 1.8A; IB2= -4.5A 0.26 μs isc Website:www.iscsemi.cn |
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