BDY44 datasheet(2/2 Pages) ISC

Part #	BDY44

Description	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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2 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDY44

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 200mA; IB= 0

350

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

750

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 2mA; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1.5A

1.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1.5A

2.0

ICBO

Collector Cutoff Current

VCB= 750V; IE= 0

VCB= 750V; IE= 0, TC=150℃

0.2

2.0

hFE-1

DC Current Gain

IC= 1A; VCE= 2V

hFE-2

DC Current Gain

IC= 5A; VCE= 2V

Current Gain-Bandwidth Product

IC= 0.5A; VCE= 10V

MHz

Switching times

ton

Turn-on Time

0.5

μs

Fall Time

1.0

μs

toff

Turn-off Time

IC= 2.5A; IB1= -IB2= 0.5A

4.0

μs

isc Website：www.iscsemi.cn

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