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BDT41 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDT41
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT41 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BDT41/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A
80V(Min)- BDT41B; 100V(Min)- BDT41C
·Complement to Type BDT42/42A/42B/42C
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(T =25℃
a
)
SYMBOL
PARAMETER
VALUE
UNIT
BDT41
80
BDT41A
100
BDT41B
120
VCBO
Collector-Base Voltage
BDT41C
140
V
BDT41
40
BDT41A
60
BDT41B
80
VCEO
Collector-Emitter Voltage
BDT41C
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current
3
A
PC
Collector Power Dissipation
TC=25℃
65
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.92
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
70
℃/W
isc Website：www.iscsemi.cn


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