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BDT32 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDT32
Description  isc Silicon PNP Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDT32 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
BDT32/A/B/C
DESCRIPTION
·DC Current Gain -hFE = 25(Min)@ IC= -1.0A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A
-80V(Min)- BDT32B; -100V(Min)- BDT32C
·Complement to Type BDT31/A/B/C
APPLICATIONS
·Designed for use in audio output stages and general amplifier
and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT32
-80
BDT 32A
-100
BDT 32B
-120
VCBO
Collector-Base Voltage
BDT 32C
-140
V
BDT32
-40
BDT 32A
-60
BDT 32B
-80
VCEO
Collector-Emitter Voltage
BDT 32C
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-5
A
IB
B
Base Current
-1
A
PC
Collector Power Dissipation
TC=25℃
40
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
3.12
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
70
℃/W
isc Website：www.iscsemi.cn


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