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BD797 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BD797
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD797 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BD797 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BD797 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD797
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min.)
·Low Saturation Voltage
·Complement to Type BD798
APPLICATIONS
·Designed for a wide variety of medium-power switching and
amplifier applications , such as series and shunt regulators
and driver and output stages of high-fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
IB
B
Base Current-Continuous
3
A
PC
Collector Power Dissipation
TC=25℃
65
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.92
℃/W
isc Website：www.iscsemi.cn


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