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2SD2580 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD2580
Description  Silicon NPN Power Transistors
Download  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD2580 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2SD2580
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
800
V
VCEsat
Collector-emitter saturation voltage
IC=8 A;IB=1.6A
5
V
VBEsat
Base-emitter saturation voltage
IC=8 A;IB=1.6A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
ICES
Collector cut-off current
VCE=1500V ;RBE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
40
130
mA
hFE-1
DC current gain
IC=8A ; VCE=5V
5
8
hFE-2
DC current gain
IC=1A ; VCE=5V
15
30
tf
Fall time
IC=6A;RL=33.3Ω
IB1=1.2A;-IB2=2.4A;VCC=200V
0.3
μs


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