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2SB1069 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB1069 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon PNP Power Transistors 2SB1069 2SB1069A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SB1069 -20 V(BR)CEO Collector-emitter breakdown voltage 2SB1069A IC=-10mA ,IB=0 -40 V VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 60 260 fT Transition frequency IC=-0.5A ; VCE=-5V 150 MHz Switching times ton Turn-on time 0.3 μs tstg Storage time 0.4 μs tf Fall time IC=-2A; IB1=-IB2=-0.2A 0.1 μs hFE-2 classifications R Q P 60-120 90-180 130-260 |
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