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2N5879 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5879 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5879 -60 VCBO Collector-base voltage 2N5880 Open emitter -80 V 2N5879 -60 VCEO Collector-emitter voltage 2N5880 Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -15 A ICM Collector current-peak -30 A IB Base current -5 A PD Total Power Dissipation TC=25℃ 160 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.1 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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